Toshiba - 1SV269(TPH3,F)

MV104RL1 by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 39.5 pF nominal capacitance. It operates at up to 125 °C and has a min breakdown voltage of 32V. Ideal for applications requiring variable capacitance diodes in cylindrical packages.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

BBY6502VH6327XTSA1 by Infineon: Varactor diode with 29.5pF capacitance, 15V breakdown voltage, and -55 to 150°C operating range. Ideal for RF applications due to hyperabrupt diode classification and small outline package style.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 460 pF; Maximum Repetitive Peak Reverse Voltage: 15 V; Minimum Quality Factor: 150;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Maximum Repetitive Peak Reverse Voltage: 6 V; Nominal Diode Capacitance: .225 pF;

MV2101G by Onsemi is a varactor diode with a min quality factor of 450, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.28 W, making it suitable for RF tuning circuits in communication systems. The diode's abrupt variable capacitance classification and through-hole terminal form offer precise control over capacitance ratios in electronic designs.

SVC720 by Onsemi is a Varactor Diode with 2 elements, common cathode config, and 24.15 pF nominal capacitance. It operates at a max temp of 150 °C and has a min breakdown voltage of 16V. Ideal for applications requiring variable capacitance diodes in surface mount packages.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

BB909B-TAPE-REEL by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, a breakdown voltage of 32 V, and operates up to 100 °C. Ideal for tuning circuits and RF applications, its isolated axial terminals ensure reliable performance.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 10;

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Minimum Quality Factor: 200; Maximum Repetitive Peak Reverse Voltage: 16 V; Nominal Diode Capacitance: 461 pF;

2803 Varactor Diode by Api Technologies features a Min Quality Factor of 150, Nominal Capacitance of 10 pF, and Breakdown Voltage of 22 V. Ideal for applications in Very High Frequency to Ultra High Frequency bands due to its Variable Capacitance design and Silicon diode element material.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Minimum Quality Factor: 200; Nominal Diode Capacitance: 459 pF; Maximum Repetitive Peak Reverse Voltage: 8 V;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 6 V; Minimum Quality Factor: 20; Nominal Diode Capacitance: .225 pF;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 30; Maximum Repetitive Peak Reverse Voltage: 6 V;