Toshiba - 1SV285(TPH3,F)

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

1N4796 by Onsemi is a varactor diode with a min quality factor of 15, max reverse current of 0.005 uA, and nominal capacitance of 47 pF. It is used in RF applications for frequency tuning due to its abrupt variable capacitance classification.

BBY5502VH6327XTSA1 by Infineon is a single hyperabrupt varactor diode with 18.6pF capacitance, 16V breakdown voltage, and -55 to 150°C operating range. Ideal for applications requiring variable capacitance in small outline packages.

1N4791 by Onsemi is a varactor diode with 18pF nominal capacitance, abrupt variable capacitance classification, and 15 min quality factor. It is used in RF applications for tuning circuits due to its high-quality factor and low reverse current of 0.005uA.

BB909A-AMMOPAK by NXP Semiconductors is a variable capacitance diode designed for very high frequency applications. It features a max reverse current of 0.01 µA, operates up to 100 °C, and has a breakdown voltage of 32 V. Ideal for tuning circuits and RF applications.

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .8 pF; Minimum Quality Factor: 25; Maximum Repetitive Peak Reverse Voltage: 6 V;

MV1638 by Onsemi is a single varactor diode with 33pF capacitance, 20V breakdown voltage, and 0.4W power dissipation. It is used in RF applications for frequency tuning due to its variable capacitance property.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Minimum Quality Factor: 30; Nominal Diode Capacitance: .1 pF; Maximum Repetitive Peak Reverse Voltage: 6 V;

1N5696 by Onsemi is a varactor diode with 450 min Quality Factor, 6.8 pF nominal capacitance, and 65 V min breakdown voltage. It is used in RF tuning circuits for frequency modulation due to its abrupt variable capacitance classification. Operating temp ranges from -65 to 175 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

The Onsemi SVC707 is a single varactor diode with 19.92 pF capacitance and 15 V breakdown voltage. It is used in applications requiring variable capacitance, such as tuning circuits in RF communication systems. The diode's silicon element and through-hole terminal form make it suitable for high temperature environments up to 150 °C.

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

MMBV2103LT1 by Onsemi is a varactor diode with a min quality factor of 400, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 10 pF and a min breakdown voltage of 30 V, making it ideal for RF tuning circuits in communication systems. The diode's small outline package with gull wing terminals and tin lead finish allows for easy surface mount assembly.