2SA1162-GR(F) by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SA1162-GR(F)
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;
Datasheet	2SA1162-GR(F) Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	80 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.15 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	YES
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.15 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	125 Cel
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	200
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	LOW NOISE
Maximum Collector-Base Capacitance:	7 pF
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	.3 V

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