Toshiba - 2SA1162-GR,LF

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2SA1162-GR,LF by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SA1162-GR,LF
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;
Datasheet 2SA1162-GR,LF Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 80 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): .15 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 125 Cel
Maximum Power Dissipation Ambient: .15 W
Other Names: 2SA1162-GR(T5L,F,T)
2SA1162-GR(TE85L,F))
2SA1162-GR,LF(T
2SA1162-GR(TE85LF)DKR
2SA1162-GRLFTRINACTIVE
2SA1162-GRCT
2SA1162S-GRLFCT-ND
2SA1162-GR(TE85LF))TR
2SA1162-GRLFCT
2SA1162S-GRLFTR
2SA1162-GRCT-ND
2SA1162-GR(TE85LF))CT
2SA1162-GR(TE85LF))TR-ND
2SA1162-GR(TE85LF)TR-ND
2SA1162-GR,LF(B
2SA1162-GRLFCTINACTIVE
2SA1162-GRTR
2SA1162S-GRLFTR-ND
2SA1162-GRDKR
2SA1162-GR(TE85LF)DKR-ND
2SA1162-GRLFTR
2SA1162SGRLF
2SA1162-GRLFDKRINACTIVE
2SA1162S-GRLFCT
2SA1162S-GRLFDKR-ND
2SA1162S-GR,LF
2SA1162S
2SA1162-GRLFDKR
2SA1162-GR(TE85LF)TR
2SA1162-GRTR-ND
2SA1162S-GRLFDKR
2SA1162-GR(TE85LF))DKR-ND
2SA1162-GR(TE85LF))CT-ND
2SA1162-GR(TE85LF)CT-ND
2SA1162-GR(TE85LF)CT
2SA1162-GR(TE85L,F)
2SA1162-GR(TE85LF))DKR
2SA1162-GRDKR-ND
JEDEC-95 Code: TO-236
Polarity or Channel Type: PNP
Minimum DC Current Gain (hFE): 200
Maximum Collector-Emitter Voltage: 50 V
Additional Features: LOW NOISE
Maximum Collector-Base Capacitance: 7 pF
Maximum VCEsat: .3 V
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