2SA1213-Y(TE12L,ZC by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SA1213-Y(TE12L,ZC
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 120 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
Datasheet	2SA1213-Y(TE12L,ZC Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	120 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	120
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1 W
Maximum Collector-Emitter Voltage:	50 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-F3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	FLAT
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.5 V
Maximum Power Dissipation Ambient:	.5 W

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