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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 2SA1312 |
| Description | PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; |
| Datasheet | 2SA1312 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 100 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | .1 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Sub-Category: | Other Transistors |
| Surface Mount: | YES |
| No. of Terminals: | 3 |
| Maximum Power Dissipation (Abs): | .15 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| JESD-30 Code: | R-PDSO-G3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | GULL WING |
| Maximum Operating Temperature: | 125 Cel |
| JEDEC-95 Code: | TO-236 |
| Polarity or Channel Type: | PNP |
| Minimum DC Current Gain (hFE): | 200 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 120 V |
| Additional Features: | LOW NOISE |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | .3 V |
