2SA1587-BL,LF by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SA1587-BL,LF
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .1 A;
Datasheet	2SA1587-BL,LF Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	100 MHz
Other Names:	2SA1587BLLFTR 2SA1587-BLLF(BTR 2SA1587-BLLF(BCT-ND 2SA1587-BL(TE85LFCT-ND 2SA1587-BLLF(BDKR 2SA1587-BL,LF(T 2SA1587-BLLFTR 2SA1587-BL(TE85LFTR-ND 2SA1587-BLLF(BTR-ND 2SA1587-BLLFDKR 2SA1587-BL(TE85LFDKR-ND 2SA1587-BL(TE85LFTR 2SA1587BLLFTR-ND 2SA1587-BLLFDKRINACTIVE 2SA1587-BL(TE85L,F 2SA1587-BLLF(BDKR-ND 2SA1587-BL(TE85LFCT 2SA1587-BL(TE85LFDKR 2SA1587-BL,LF(B 2SA1587-BLLFCT 2SA1587-BLLFTRINACTIVE 2SA1587-BLLF(BCT 2SA1587-BLLFCTINACTIVE
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	350
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.1 W
Maximum Collector-Emitter Voltage:	120 V
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Additional Features:	LOW NOISE
Maximum Operating Temperature:	125 Cel
Maximum VCEsat:	.3 V
Maximum Power Dissipation Ambient:	.1 W

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