Toshiba - 2SA1620YTE85L

  1. Home
  2. Toshiba - 2SA1620YTE85L
2SA1620YTE85L by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SA1620YTE85L
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .3 A; Package Body Material: PLASTIC/EPOXY;
Datasheet 2SA1620YTE85L Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .3 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
JEDEC-95 Code: TO-236
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 40
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 150 Cel
Maximum VCEsat: .4 V
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC817-25 by Central Semiconductor

BC817-25

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Package Body Material: PLASTIC/EPOXY;
2N2905A by Onsemi

2N2905A

Onsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .6 A; Terminal Position: BOTTOM; JEDEC-95 Code: TO-39;
BC547B by Crimson Semiconductor

BC547B

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3906 by Solid State Devices

2N3906

Solid State Devices

PNP; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 40 V; No. of Elements: 1;
2N2222A by Nte Electronics

2N2222A

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Terminal Form: WIRE;
2N3906 by Continental Device India

2N3906

Continental Device India

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
ULN2003ADRG4 by Texas Instruments

ULN2003ADRG4

Texas Instruments

ULN2003ADRG4 by Texas Instruments is a NPN BJT transistor with 7 elements, max. collector current of 0.5A, and VCE of 50V. Ideal for switching applications, it comes in a small outline package with gull wing terminals for surface mount assembly.
2N3904TFR by Onsemi

2N3904TFR

Onsemi

2N3904TFR by Onsemi is a NPN BJT transistor with max. power dissipation of 0.35W, hFE of 30, and fT of 300MHz. Ideal for switching applications due to its max. collector-emitter voltage of 40V and max. collector current of 0.2A. Operates in temp range -55 to 150°C, with turn on time of 70ns and turn off time of 250ns.
2N2907AUB by Optek Technology

2N2907AUB

Optek Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A; No. of Elements: 1;
2N3906 by SPC TECHNOLOGY/ MULTICOMP

2N3906

SPC TECHNOLOGY/ MULTICOMP

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 70 ns;
ULN2003AIPWR by Texas Instruments

ULN2003AIPWR

Texas Instruments

ULN2003AIPWR by Texas Instruments is a NPN BJT with 7 elements, max. collector current of 0.5A, and max. collector-emitter voltage of 50V. It's used for switching applications in surface mount setups due to its complex configuration and small outline package style.
MMBT3904 by Nexperia

MMBT3904

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Terminal Finish: TIN;
2N2219A by Vishay Intertechnology

2N2219A

Vishay Intertechnology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Package Body Material: METAL; Qualification: Not Qualified;
BC847B,215 by Nexperia

BC847B,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
2N2222A by Motorola

2N2222A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Collector-Base Capacitance: 8 pF;
BC847B by Rectron

BC847B

Rectron

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
MMBT2222A by Secos

MMBT2222A

Secos

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .6 A;
MMBT2907A by Changzhou Galaxy Century Microelectronics

MMBT2907A

Changzhou Galaxy Century Microelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Transistor Element Material: SILICON;
2N3904TFR by Fairchild Semiconductor

2N3904TFR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2222A by Vishay Semiconductors

MMBT2222A

Vishay Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Minimum DC Current Gain (hFE): 75;