Toshiba - 2SA1761(TPE6,F)

  1. Home
  2. Toshiba - 2SA1761(TPE6,F)
2SA1761(TPE6,F) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SA1761(TPE6,F)
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 120;
Datasheet 2SA1761(TPE6,F) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 3 A
Maximum Power Dissipation (Abs): .9 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 120
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC847C by Jiangsu Changjiang Electronics Technology

BC847C

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC548 by Bharat Electronics

BC548

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N4401 by General Electric Solid State

2N4401

General Electric Solid State

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
PZT2222A by Infineon Technologies

PZT2222A

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): .6 A;
2N4401 by Thomson Consumer Electronics

2N4401

Thomson Consumer Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
TIP110 by Asi Semiconductor

TIP110

Asi Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
TIP41C by Tt Electronics Plc

TIP41C

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD139 by Texas Instruments

BD139

Texas Instruments

BD139 by Texas Instruments is an NPN transistor with a max power dissipation of 8W and max collector current of 1.5A. With a min DC current gain of 40, it operates up to 150°C making it suitable for high-power applications like amplifiers and power supplies.
2N3055 by Semiconductors

2N3055

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
D44H11 by Semiconductor Technology

D44H11

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
BC547C by Jiangsu Changjiang Electronics Technology

BC547C

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N4401 by Vishay Intertechnology

2N4401

Vishay Intertechnology

Vishay Intertechnology's 2N4401 NPN transistor has a max power dissipation of 0.35W, min DC current gain of 100, and max collector current of 0.6A. Ideal for applications requiring high frequency operation up to 250MHz in a single configuration at temperatures up to 150°C.
TIP110 by National Semiconductor

TIP110

National Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; JESD-609 Code: e0;
TIP127 by National Semiconductor

TIP127

National Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
2N3906 by Panjit International

2N3906

Panjit International

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC337-16 by Philips Semiconductors

BC337-16

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; JESD-609 Code: e3;
TIP120 by Bharat Electronics

TIP120

Bharat Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
FDV304P_NB8U003 by Fairchild Semiconductor

FDV304P_NB8U003

Fairchild Semiconductor

FDV304P_NB8U003 by Fairchild Semiconductor is a P-CHANNEL transistor with a max drain current of 0.46A and power dissipation of 0.35W. It operates in enhancement mode, suitable for applications requiring high temperature resistance up to 150°C, making it ideal for various electronic circuits.
BC817-25 by Weitron Technology

BC817-25

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
TIP125 by Iskra Semic Capacitors Industry

TIP125

Iskra Semic Capacitors Industry

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;