Toshiba - 2SA1832-GR,LF

  1. Home
  2. Toshiba - 2SA1832-GR,LF
2SA1832-GR,LF by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SA1832-GR,LF
Description PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 80 MHz; Maximum Power Dissipation (Abs): .1 W; Maximum Collector Current (IC): .15 A;
Datasheet 2SA1832-GR,LF Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 80 MHz
Other Names: 2SA1832-GR(T5L,F,T
2SA1832-GR (T5L,F,T
2SA1832-GRT5LFT
2SA1832-GR(T5LFT)DKR-ND
2SA1832-GRLFDKR
2SA1832-GR(T5LFT)TR
2SA1832-GRLF
2SA1832-GRLFTR
2SA1832-GRLF-ND
2SA1832-GR(T5LFT)CT
2SA1832-GR,LF(B
2SA1832-GR(T5LFT)DKR
2SA1832-GR,LF(T
2SA1832-GR(T5L,F,T)
2SA1832-GR(T5LFT)CT-ND
2SA1832-GR(T5LFT)TR-ND
2SA1832-GRLFCT
2SA1832-GRLFINACTIVE
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
No. of Terminals: 3
Maximum Power Dissipation (Abs): .1 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 125 Cel
Maximum Collector-Base Capacitance: 7 pF
Maximum VCEsat: .3 V
Maximum Power Dissipation Ambient: .1 W
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2222AUA by Microchip Technology

2N2222AUA

Microchip Technology

2N2222AUA by Microchip is a NPN transistor with max. collector-emitter voltage of 50V and max. collector current of 0.8A. It has a min. DC current gain of 30, ideal for switching applications with a max. power dissipation of 0.65W in surface mount package style suitable for small outline designs.
SMMBTA56LT1G by Onsemi

SMMBTA56LT1G

Onsemi

SMMBTA56LT1G by Onsemi is a PNP BJT transistor with 3 terminals, hFE of 100, and max. power dissipation of 0.3W. Ideal for amplifier applications, it operates at up to 150°C, with VCE of 80V and IC of 0.5A. It comes in a small outline package with matte tin finish and AEC-Q101 reference standard compliance.
2N3906 by Jiangsu Changjiang Electronics Technology

2N3906

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Element Material: SILICON;
SMBT3904DW1T1G by Onsemi

SMBT3904DW1T1G

Onsemi

SMBT3904DW1T1G by Onsemi is a NPN BJT with hFE of 100, fT of 300 MHz, and IC of 0.2 A. Ideal for small signal applications in electronics due to its surface mount capability and max operating temperature of 150°C.
BC846B by Good-ark Electronics

BC846B

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
MMBT2907A by STMicroelectronics

MMBT2907A

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
BC817-40 by Fairchild Semiconductor

BC817-40

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .8 A;
BC807-40W,115 by NXP Semiconductors

BC807-40W,115

NXP Semiconductors

BC807-40W,115 by NXP Semiconductors is a PNP BJT transistor for switching applications. With a VCEsat of 0.7V and hFE of 250, it can handle up to 0.5A collector current. Operating at a max temperature of 150°C, this transistor has a transition frequency of 80MHz making it suitable for high-speed switching circuits.
SMMBT3904WT1G by Onsemi

SMMBT3904WT1G

Onsemi

SMMBT3904WT1G by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 30, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates at up to 150°C, with Vce(max) of 40V and fT of 300MHz.
2N2219A by Microchip Technology

2N2219A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Minimum Operating Temperature: -55 Cel; Transistor Element Material: SILICON;
2N2905A by NXP Semiconductors

2N2905A

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Collector Current (IC): .6 A; Case Connection: COLLECTOR;
BC817-40 by Dc Components

BC817-40

Dc Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
2N2219A by Onsemi

2N2219A

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns;
BC807-40,215 by Nexperia

BC807-40,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Position: DUAL;
MMBT3906 by National Semiconductor

MMBT3906

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
2N3904 by Space Power Electronics

2N3904

Space Power Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N3904 by Bytesonic Electronics

2N3904

Bytesonic Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
BC817-25 by Multicomp Pro

BC817-25

Multicomp Pro

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 170 MHz; Maximum Collector Current (IC): .5 A; Minimum Operating Temperature: -65 Cel;
BC846B by Central Semiconductor

BC846B

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC817-25LT1G by Onsemi

BC817-25LT1G

Onsemi

BC817-25LT1G by Onsemi is a NPN BJT with 160 min hFE, 45V VCEO, and 100MHz fT. Ideal for small signal applications in electronics due to its compact SMALL OUTLINE package and high transition frequency. Suitable for surface mount designs requiring low power dissipation and moderate collector current.