Toshiba - 2SA1942-O(Q)

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2SA1942-O(Q) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SA1942-O(Q)
Description Power Bipolar Transistors;
Datasheet 2SA1942-O(Q) Datasheet
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JANTX2N3055 by Api Technologies

JANTX2N3055

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
TIP120 by Semitronics

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NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; No. of Elements: 1;
BCP56-16T3G by Onsemi

BCP56-16T3G

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BCP56-16T3G by Onsemi is a NPN Power BJT with 80V VCEO, 1A IC, and 130MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. Operating b/w -55 to 150°C, it offers high DC current gain and can handle up to 1.5W power dissipation.
MJD340T4 by Motorola

MJD340T4

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30; Terminal Form: GULL WING;
TIP142 by Mospec Semiconductor

TIP142

Mospec Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Maximum Operating Temperature: 150 Cel;
BD679 by Baneasa S A

BD679

Baneasa S A

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 4 A; No. of Elements: 1; JESD-30 Code: R-PSFM-T3;
ZTX951 by Diodes Incorporated

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ZTX951 by Diodes Inc. is a PNP BJT transistor with max. 60V VCE, 4A IC, and 120MHz fT. Ideal for power applications requiring high DC current gain (hFE) of min. 10, it operates up to 200°C making it suitable for various industrial uses like power supplies and motor control systems.
TIP110 by Microsemi

TIP110

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Package Body Material: PLASTIC/EPOXY; Transistor Element Material: SILICON; Package Shape: RECTANGULAR;
TIP3055 by Onsemi

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Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
D44H11 by SPC TECHNOLOGY/ MULTICOMP

D44H11

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 15 MHz; Maximum Collector Current (IC): 10 A; Terminal Position: SINGLE;
TIP47 by Motorola

TIP47

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Maximum Operating Temperature: 150 Cel;
ULN2804A by Vishay Intertechnology

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Vishay Intertechnology's ULN2804A is an 8-bank Darlington transistor array with built-in diode and resistor, ideal for switching applications. Featuring a max collector-emitter voltage of 50V and a max collector current of 0.5A, this NPN transistor in a rectangular package with through-hole terminals offers reliable performance.
TIP36C by Microsemi

TIP36C

Microsemi

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Package Style (Meter): FLANGE MOUNT;
TIP47 by Taitron Components

TIP47

Taitron Components

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 1 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
BD138 by NXP Semiconductors

BD138

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 160 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
D44H8 by Rectron

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Rectron

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): 10 A; JESD-30 Code: R-PSFM-T3;
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FZT857TA by Diodes Incorporated

FZT857TA

Diodes Incorporated

FZT857TA by Diodes Inc. is a NPN BJT transistor with max. collector-emitter voltage of 300V, max. collector current of 3.5A, and min. DC current gain of 100 hFE. Ideal for switching applications, it operates b/w -55 to 150°C and has a transition frequency of 80MHz in a small outline package shape.
NJVMJD32CT4G by Onsemi

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