Toshiba - 2SA1962-O(S1,E

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2SA1962-O(S1,E by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SA1962-O(S1,E
Description Power Bipolar Transistors;
Datasheet 2SA1962-O(S1,E Datasheet
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TIP112 by Ge Industrial Solutions

TIP112

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NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR;
2N3055H by Solitron Devices

2N3055H

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): .8 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
2N3904T&A by Continental Device India

2N3904T&A

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Power Bipolar Transistors; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
TIP120 by Tt Electronics Plc

TIP120

Tt Electronics Plc

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000; Terminal Finish: Tin/Lead (Sn/Pb);
TIP127 by Fairchild Semiconductor

TIP127

Fairchild Semiconductor

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Application: SWITCHING;
MC1413DR2G by Onsemi

MC1413DR2G

Onsemi

MC1413DR2G by Onsemi is a NPN BJT transistor for switching applications. It has hFE of 1000, VCE of 50V, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for surface mount designs in various electronic circuits.
ULN2003APW by Texas Instruments

ULN2003APW

Texas Instruments

ULN2003APW by Texas Instruments is a NPN BJT with 7 elements and 16 terminals. It has a max collector-emitter voltage of 50V and max collector current of 0.5A, suitable for switching applications. This surface-mount transistor in small outline package is made of silicon with nickel/palladium/gold terminal finish.
MC1413BDR2G by Onsemi

MC1413BDR2G

Onsemi

MC1413BDR2G by Onsemi is a NPN BJT transistor with 1000 min hFE. It operates up to 150°C, handles 50V max collector-emitter voltage, and supports switching applications. The package is small outline with 16 terminals in gull wing form for surface mount assembly.
TIP31C by Nte Electronics

TIP31C

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BD140 by Samsung

BD140

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BCP56-16 by Continental Device India

BCP56-16

Continental Device India

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 130 MHz; Maximum Power Dissipation (Abs): 1.33 W; Maximum Collector Current (IC): 1 A;
TIP31C by Microsemi

TIP31C

Microsemi

NPN; Surface Mount: NO; Maximum Collector Current (IC): 3 A; Transistor Element Material: SILICON; No. of Terminals: 3; JESD-30 Code: R-PSFM-T3;
TIP47 by General Transistor

TIP47

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NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
BDW93C by STMicroelectronics

BDW93C

STMicroelectronics

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JEDEC-95 Code: TO-220AB;
TIP112G by Onsemi

TIP112G

Onsemi

TIP112G by Onsemi is a power BJT transistor with NPN polarity. It has a max power dissipation of 50W and can handle a max collector-emitter voltage of 100V. This transistor is commonly used in amplifier applications due to its high DC current gain (hFE) of 500 and nominal transition frequency (fT) of 25MHz.
TIP112 by Taitron Components

TIP112

Taitron Components

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 100 V; Transistor Application: AMPLIFIER;
BDX53C by Power Innovations

BDX53C

Power Innovations

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 8 A; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): FLANGE MOUNT;
2SC5200 by Toshiba

2SC5200

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 15 A; Case Connection: COLLECTOR;
BD679AG by Onsemi

BD679AG

Onsemi

BD679AG by Onsemi is a NPN Power BJT with 40W power dissipation, 750 min hFE, and 80V VCE. Ideal for amplifier applications due to its Darlington configuration with built-in diode and resistor. Package style is flange mount with through-hole terminals.
JANTX2N3055 by Powertech

JANTX2N3055

Powertech

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Shape: ROUND; Qualification: Not Qualified;