Toshiba - 2SA1972(TE6,F,M)

  1. Home
  2. Toshiba - 2SA1972(TE6,F,M)
2SA1972(TE6,F,M) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SA1972(TE6,F,M)
Description PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .9 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 140;
Datasheet 2SA1972(TE6,F,M) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .9 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 140
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP42C by Transys Electronics

TIP42C

Transys Electronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP112 by Asi Semiconductor

TIP112

Asi Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
TIP120 by Intersil

TIP120

Intersil

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: Tin/Lead (Sn/Pb);
2N2222A by Transistor & Electronic

2N2222A

Transistor & Electronic

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
2N3055 by Bharat Electronics

2N3055

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BD243C by Tt Electronics Plc

BD243C

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; No. of Elements: 1;
BC327-25 by Infineon Technologies

BC327-25

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 160;
MMBT3904 by Samsung

MMBT3904

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
BSR16 by National Semiconductor

BSR16

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): .6 A;
MMBT3906 by Philips Semiconductors

MMBT3906

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .1 A;
TIP127 by Philips Semiconductors

TIP127

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
BC807-40 by Jiangsu Changjiang Electronics Technology

BC807-40

Jiangsu Changjiang Electronics Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
NX3008CBKS,115 by NXP Semiconductors

NX3008CBKS,115

NXP Semiconductors

NXP Semiconductors' NX3008CBKS,115 is a N/P-channel transistor with 0.35A max drain current and 0.445W power dissipation. It operates in enhancement mode with 260°C peak reflow temp, suitable for various electronic applications.
BD138 by Shanghai Lunsure Electronic Technology

BD138

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
2N2905A by Semiconductors

2N2905A

Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
TIP125 by General Electric Solid State

TIP125

General Electric Solid State

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
BDX53C by Asi Semiconductor

BDX53C

Asi Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
MMBT3906 by Sinyork

MMBT3906

Sinyork

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
TIP50 by Transys Electronics

TIP50

Transys Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
MMBT3904 by Boca Semiconductor

MMBT3904

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;