Toshiba - 2SA2069(TE12L)

  1. Home
  2. Toshiba - 2SA2069(TE12L)
2SA2069(TE12L) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SA2069(TE12L)
Description PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 1.5 A; Maximum Operating Temperature: 150 Cel;
Datasheet 2SA2069(TE12L) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 1.5 A
Maximum Power Dissipation (Abs): 2 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

TIP142 by North American Philips Discrete Products Div

TIP142

North American Philips Discrete Products Div

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;
TIP42C by Asi Semiconductor

TIP42C

Asi Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
NX3008CBKS,115 by NXP Semiconductors

NX3008CBKS,115

NXP Semiconductors

NXP Semiconductors' NX3008CBKS,115 is a N/P-channel transistor with 0.35A max drain current and 0.445W power dissipation. It operates in enhancement mode with 260°C peak reflow temp, suitable for various electronic applications.
BC847C/AU,215 by NXP Semiconductors

BC847C/AU,215

NXP Semiconductors

BC847C/AU,215 by NXP Semiconductors is an NPN transistor with a single configuration. It has a max power dissipation of 0.25W and a min DC current gain of 420. Ideal for applications requiring a max collector current of 0.1A, such as in high-frequency circuits up to 100MHz operating at temperatures up to 150°C.
BU508AW by Inchange Semiconductor

BU508AW

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
BC847B/DG,215 by NXP Semiconductors

BC847B/DG,215

NXP Semiconductors

NXP Semiconductors BC847B/DG,215 is an NPN transistor with a single configuration for surface mount applications. It features a max power dissipation of 0.25W, min DC current gain of 200, and max operating temp of 150°C. Ideal for low-power electronic circuits requiring high frequency operation up to 100MHz.
BDX53C by Thomson Consumer Electronics

BDX53C

Thomson Consumer Electronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
BC337-40 by Shanghai Lunsure Electronic Technology

BC337-40

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; No. of Elements: 1;
TIP117 by Philips Semiconductors

TIP117

Philips Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
TIP112 by Semitronics

TIP112

Semitronics

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
TIP112 by North American Philips Discrete Products Div

TIP112

North American Philips Discrete Products Div

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
BC548C by Philips Semiconductors

BC548C

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
TIP111 by Comset Semiconductors

TIP111

Comset Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel;
BC846 by North American Philips Discrete Products Div

BC846

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
MMBTA92 by Sinyork

MMBTA92

Sinyork

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .5 A;
MJE340 by Inchange Semiconductor

MJE340

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
ZTX651M1 by Plessey Semiconductors Discrete Components Div

ZTX651M1

Plessey Semiconductors Discrete Components Div

Other Transistors;
TIP127 by Semitronics

TIP127

Semitronics

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
2N3019 by Semiconductors

2N3019

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
TIP41C by Semitronics

TIP41C

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;