2SB1067 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SB1067
Description	PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 1.5 W; Maximum Collector Current (IC): 2 A;
Datasheet	2SB1067 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	50 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.5 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	10 W
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	2000
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	1.5 V

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