2SB1381 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SB1381
Description	PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): 5 A; Qualification: Not Qualified;
Datasheet	2SB1381 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	5 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	3
Maximum Power Dissipation (Abs):	2 W
Terminal Position:	SINGLE
Package Style (Meter):	FLANGE MOUNT
JESD-30 Code:	R-PSFM-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	ISOLATED
Maximum Power Dissipation Ambient:	30 W
Polarity or Channel Type:	PNP
Minimum DC Current Gain (hFE):	500
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	100 V
Maximum VCEsat:	3 V

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