2SB906-Y(T6L1DI,NQ by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SB906-Y(T6L1DI,NQ
Description	PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 3 A;
Datasheet	2SB906-Y(T6L1DI,NQ Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	9 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	PNP
Surface Mount:	YES
Minimum DC Current Gain (hFE):	100
No. of Terminals:	2
Maximum Power Dissipation (Abs):	20 W
Maximum Collector-Emitter Voltage:	60 V
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum VCEsat:	1.7 V
Maximum Power Dissipation Ambient:	1 W

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