2SB906O by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SB906O
Description	PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 9 MHz; Maximum Collector Current (IC): 3 A; Maximum Power Dissipation Ambient: 20 W;
Datasheet	2SB906O Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	9 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	3 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Polarity or Channel Type:	PNP
Surface Mount:	NO
Minimum DC Current Gain (hFE):	20
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	60 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum VCEsat:	1.7 V
Maximum Power Dissipation Ambient:	20 W

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