Toshiba - 2SB907(SM)

  1. Home
  2. Toshiba - 2SB907(SM)
2SB907(SM) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SB907(SM)
Description PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A; Maximum Operating Temperature: 150 Cel;
Datasheet 2SB907(SM) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 3 A
Maximum Power Dissipation (Abs): 15 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 1000
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC847 by Philips Semiconductors

BC847

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BD140 by Philips Semiconductors

BD140

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP142 by North American Philips Discrete Products Div

TIP142

North American Philips Discrete Products Div

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 10 A; Minimum DC Current Gain (hFE): 1000;
BC846B by Plessey Semiconductors Discrete Components Div

BC846B

Plessey Semiconductors Discrete Components Div

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
40474 by National Semiconductor

40474

National Semiconductor

40474 by National Semiconductor is an NPN transistor with a max power dissipation of 0.18W, hFE of 275, and fT of 900MHz. It is used in applications requiring low collector current such as signal amplification in electronic circuits due to its single configuration.
BC807-25 by Itt Components

BC807-25

Itt Components

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
BC846B by Jiangsu Changjiang Electronics Technology

BC846B

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC337-16 by Jiangsu Changjiang Electronics Technology

BC337-16

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 210 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A;
D44H11 by Harris Semiconductor

D44H11

Harris Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 10 A;
MJE3055T by Mospec Semiconductor

MJE3055T

Mospec Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
BU508AW by Philips Semiconductors

BU508AW

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 8 A; Minimum DC Current Gain (hFE): 6;
BD138 by Tesla Elektronicke Soucastky

BD138

Tesla Elektronicke Soucastky

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP117 by Intersil

TIP117

Intersil

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 500;
2N3019 by Transistor & Electronic

2N3019

Transistor & Electronic

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
BDX53C by Tt Electronics Plc

BDX53C

Tt Electronics Plc

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
TIP112 by Unisonic Technologies

TIP112

Unisonic Technologies

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
2N2222A by Semiconductors

2N2222A

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
FQP27P06_SW82127 by Fairchild Semiconductor

FQP27P06_SW82127

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BC817-25 by Shandong Yiguang Electronic Joint Stock

BC817-25

Shandong Yiguang Electronic Joint Stock

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
TIP41C by Intersil

TIP41C

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;