
Image shown is a representation only.
Manufacturer | Toshiba |
---|---|
Manufacturer's Part Number | 2SB908(2-7B1A) |
Description | PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Maximum Operating Temperature: 150 Cel; Package Body Material: PLASTIC/EPOXY; |
Datasheet | 2SB908(2-7B1A) Datasheet |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 4 A |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | DARLINGTON WITH BUILT-IN DIODE AND RESISTOR |
Transistor Element Material: | SILICON |
Transistor Application: | SWITCHING |
Polarity or Channel Type: | PNP |
Surface Mount: | NO |
Minimum DC Current Gain (hFE): | 1000 |
No. of Terminals: | 3 |
Qualification: | Not Qualified |
Maximum Collector-Emitter Voltage: | 80 V |
Terminal Position: | SINGLE |
Package Style (Meter): | IN-LINE |
JESD-30 Code: | R-PSIP-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Case Connection: | COLLECTOR |
Peak Reflow Temperature (C): | NOT SPECIFIED |