Toshiba - 2SC1627

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .31 W; Maximum Collector Current (IC): .5 A;

ULN2003AIPWR by Texas Instruments is a NPN BJT with 7 elements, max. collector current of 0.5A, and max. collector-emitter voltage of 50V. It's used for switching applications in surface mount setups due to its complex configuration and small outline package style.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 250 ns;

Diodes Inc. BC846B-7-F is a NPN BJT transistor with hFE of 200, VCE of 65V, and IC of 0.1A. Ideal for switching applications in small outline packages with Gull Wing terminals. Operates b/w -65 to 150°C, meeting AEC-Q101 standards for automotive use.

Secos BC547-C is a NPN BJT with hFE of 110, VCE of 45V, and fT of 150MHz. Ideal for low-power applications in electronics due to its 0.1A IC rating and silicon transistor element material. Its through-hole package makes it suitable for various circuit configurations.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

JANTX2N2222AUA/TR by Microchip is a NPN BJT transistor with hFE of 30, Vce of 50V, and Ic of 0.8A. Ideal for switching applications due to its fast ton of 35ns and toff of 300ns. It comes in a small outline package suitable for surface mount technology.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;

SBC817-40LT3G by Onsemi is a NPN BJT transistor with 250 min hFE, 45V VCEO, and 100MHz fT. Ideal for switching applications, it has a max power dissipation of 0.3W and operates up to 150°C. Suitable for surface mount designs with Gull Wing terminals in a small outline package.

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; JESD-30 Code: R-PDSO-G3; Maximum Turn On Time (ton): 70 ns;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

BC817-16LT1G by Onsemi is a NPN BJT transistor with 3 terminals and a max power dissipation of 0.3W. It has a min DC current gain of 100, operates at temperatures up to 150°C, and can handle a max collector-emitter voltage of 45V. This small outline transistor is ideal for applications requiring high frequency transitions up to 100MHz in surface mount configurations.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A; Maximum Turn On Time (ton): 35 ns;

BC847BVN-7 by Diodes Inc. is a small signal BJT with NPN and PNP polarity, featuring separate 2-element configuration. With a max power dissipation of 0.15W, it operates at up to 150°C and has a max collector-emitter voltage of 45V. Ideal for applications requiring high DC current gain and transition frequency up to 300MHz in compact designs.

MMBT2222AWT3G by Onsemi is a small signal NPN transistor with a max collector-emitter voltage of 40V and a max collector current of 0.6A. It is commonly used as an amplifier in various applications.

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;

BC547BTF by Onsemi is a NPN BJT transistor with max. collector-emitter voltage of 45V and max. collector current of 0.1A, ideal for switching applications. With a min. DC current gain of 200 and nominal transition frequency of 300MHz, it offers reliable performance in a cylindrical package suitable for through-hole mounting. Operating at up to 150°C, this transistor has a max power dissipation of 0.625W making it versatile for various electronic designs.

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Minimum DC Current Gain (hFE): 200;