Toshiba - 2SC2859-GR(TE85L)

  1. Home
  2. Toshiba - 2SC2859-GR(TE85L)
2SC2859-GR(TE85L) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SC2859-GR(TE85L)
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 125 Cel;
Datasheet 2SC2859-GR(TE85L) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .5 A
Maximum Power Dissipation (Abs): .15 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 125 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BD243C by National Semiconductor

BD243C

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
TIP122 by Boca Semiconductor

TIP122

Boca Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
BDX53C by Inchange Semiconductor

BDX53C

Inchange Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 20 MHz; Maximum Power Dissipation (Abs): 60 W; Maximum Collector Current (IC): 8 A;
TIP41C by North American Philips Discrete Products Div

TIP41C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP112 by Boca Semiconductor

TIP112

Boca Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
40474 by National Semiconductor

40474

National Semiconductor

40474 by National Semiconductor is an NPN transistor with a max power dissipation of 0.18W, hFE of 275, and fT of 900MHz. It is used in applications requiring low collector current such as signal amplification in electronic circuits due to its single configuration.
TIP125 by Comset Semiconductors

TIP125

Comset Semiconductors

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
MMBT3906 by Boca Semiconductor

MMBT3906

Boca Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
TIP117 by General Electric Solid State

TIP117

General Electric Solid State

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; Terminal Finish: Tin/Lead (Sn/Pb);
MJE3055T by Semiconductors

MJE3055T

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP3055 by Philips Semiconductors

TIP3055

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
BC807-25 by Shanghai Lunsure Electronic Technology

BC807-25

Shanghai Lunsure Electronic Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC856B by Vishay Intertechnology

BC856B

Vishay Intertechnology

Vishay Intertechnology's BC856B is a PNP transistor with a max power dissipation of 0.31W, min DC current gain of 200, and max operating temp of 150°C. Ideal for applications requiring a single configuration such as surface mount technology with a matte tin finish.
BC337-40 by Bharat Electronics

BC337-40

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
2N4401 by Ksl Microdevices

2N4401

Ksl Microdevices

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
MPS-A92 by General Electric Solid State

MPS-A92

General Electric Solid State

MPS-A92 by General Electric Solid State is a PNP transistor with a single configuration. It has a max power dissipation of 0.625W and can operate at temperatures up to 150°C. This transistor is commonly used in various electronic applications requiring low DC current gain and a max collector current of 0.5A.
BC817-40 by Kodenshi Auk

BC817-40

Kodenshi Auk

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
TIP41C by Boca Semiconductor

TIP41C

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP110 by Boca Semiconductor

TIP110

Boca Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
BD243C by Tt Electronics Plc

BD243C

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; No. of Elements: 1;