Toshiba - 2SC2881-Y(TE12L,C)

  1. Home
  2. Toshiba - 2SC2881-Y(TE12L,C)
2SC2881-Y(TE12L,C) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SC2881-Y(TE12L,C)
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 120;
Datasheet 2SC2881-Y(TE12L,C) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .8 A
Maximum Power Dissipation (Abs): 1 W
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MPSA42 by Sinyork

MPSA42

Sinyork

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
BC817-40 by Weitron Technology

BC817-40

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC817-16 by Shandong Yiguang Electronic Joint Stock

BC817-16

Shandong Yiguang Electronic Joint Stock

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
BC557B by Philips Semiconductors

BC557B

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;
BD138 by Philips Semiconductors

BD138

Philips Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP41C by Toshiba

TIP41C

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
TIP31C by Intersil

TIP31C

Intersil

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
MPSA42 by Semiconductors

MPSA42

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .5 A;
BC547B by Sprague Electric

BC547B

Sprague Electric

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BC546B by Philips Semiconductors

BC546B

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BD139 by Texas Instruments

BD139

Texas Instruments

BD139 by Texas Instruments is an NPN transistor with a max power dissipation of 8W and max collector current of 1.5A. With a min DC current gain of 40, it operates up to 150°C making it suitable for high-power applications like amplifiers and power supplies.
TIP122 by Semiconductors

TIP122

Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; JESD-609 Code: e0;
BC547B by Semiconductors

BC547B

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BSR16 by STMicroelectronics

BSR16

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .425 W; Maximum Collector Current (IC): .6 A;
TIP110 by Harris Semiconductor

TIP110

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
BC547C by North American Philips Discrete Products Div

BC547C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
BD140 by Texas Instruments

BD140

Texas Instruments

The Texas Instruments BD140 is a PNP transistor with max power dissipation of 8W, hFE of 40, and IC of 1.5A. Ideal for applications requiring high current amplification such as audio amplifiers and power supplies due to its single configuration and high operating temperature of 150°C.
MJE340 by Samsung

MJE340

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Terminal Finish: Tin/Lead (Sn/Pb);
BC547C by Unisonic Technologies

BC547C

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1;
BC327-25 by North American Philips Discrete Products Div

BC327-25

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 160;