Toshiba - 2SC2996-RTE85L

  1. Home
  2. Toshiba - 2SC2996-RTE85L
2SC2996-RTE85L by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SC2996-RTE85L
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 350 MHz; Maximum Collector Current (IC): .05 A; Transistor Application: AMPLIFIER;
Datasheet 2SC2996-RTE85L Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 350 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .05 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 40
No. of Terminals: 3
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 30 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Highest Frequency Band: VERY HIGH FREQUENCY BAND
Maximum Operating Temperature: 125 Cel
Maximum Collector-Base Capacitance: 1.3 pF
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

CA3083Z by Intersil

CA3083Z

Intersil

NPN; Configuration: SEPARATE, 5 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 450 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
BF959RL by Onsemi

BF959RL

Onsemi

BF959RL by Onsemi is a NPN RF BJT with max. VCE of 20V and IC of 0.1A. Operating at 150 °C, it has fT of 700MHz making it ideal for very high frequency applications in electronics. The transistor's through-hole package and cylindrical shape enhance its performance in RF circuits.
934063147215 by NXP Semiconductors

934063147215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 10 V;
JANTX2N3866A by Raytheon Semiconductor

JANTX2N3866A

Raytheon Semiconductor

RF Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; No. of Terminals: 3; Package Body Material: METAL;
BFS17WH6327XTSA1 by Infineon Technologies

BFS17WH6327XTSA1

Infineon Technologies

BFS17WH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 15V and a nominal transition frequency of 2500MHz. It is commonly used as an amplifier in applications requiring ultra high frequency band performance.
BFR106E6327HTSA1 by Infineon Technologies

BFR106E6327HTSA1

Infineon Technologies

BFR106E6327HTSA1 by Infineon Technologies is a NPN RF Small Signal BJT transistor with a max power dissipation of 0.7W and a min DC current gain of 70. It is commonly used as an amplifier in applications requiring high frequency performance up to 5000 MHz.
START405 by STMicroelectronics

START405

STMicroelectronics

START405 by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.045 W and a nominal transition frequency of 42 GHz. It operates in the C band with a compact surface mount package. Ideal for high-frequency circuits, it supports up to 150 °C.
BFT92E6327 by Infineon Technologies

BFT92E6327

Infineon Technologies

BFT92E6327 by Infineon Technologies is a PNP RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 15 and a nominal transition frequency of 5000 MHz, making it suitable for amplifier applications in the L Band. This surface-mount transistor features a small outline package with gull wing terminals and can handle up to 0.025 A collector current.
TIS129 by Texas Instruments

TIS129

Texas Instruments

TIS129 by Texas Instruments is an NPN BJT transistor with a max collector-emitter voltage of 25V and fT of 800MHz. Ideal for amplifier applications, it has a max power dissipation of 0.25W and operates in the ultra-high frequency band. The package is cylindrical with wire terminals at the bottom.
MMBTH10LT3G by Onsemi

MMBTH10LT3G

Onsemi

MMBTH10LT3G by Onsemi is an NPN RF BJT with a max fT of 650 MHz, hFE of 60, and VCEO of 25V. Ideal for UHF applications due to its small outline package and high transition frequency. Suitable for surface mount designs requiring ultra-high frequency band performance.
KSC1393O by Onsemi

KSC1393O

Onsemi

KSC1393O by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, operates in the very high frequency band up to 700 MHz, and has a max collector-emitter voltage of 30 V. This transistor comes in a cylindrical package with through-hole terminals and can handle a max power dissipation of 0.25 W at an ambient temperature of 150 °C.
SD1438 by STMicroelectronics

SD1438

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
MMBTH81LT1 by Onsemi

MMBTH81LT1

Onsemi

MMBTH81LT1 by Onsemi is a PNP RF small signal BJT with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is commonly used in applications requiring ultra high frequency band performance, such as wireless communication systems.
3003 by Advanced Power Technology

3003

Advanced Power Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Terminal Position: DUAL; Terminal Form: FLAT;
BF240 by Onsemi

BF240

Onsemi

BF240 by Onsemi is a NPN BJT transistor with 3 terminals in a cylindrical package. It has a max collector-emitter voltage of 40V, max collector current of 0.025A, and fT of 600MHz. Ideal for amplifier applications due to its high transition frequency and low collector-base capacitance.
SD1219-5 by STMicroelectronics

SD1219-5

STMicroelectronics

NPN; Surface Mount: NO; Transistor Element Material: SILICON;
2SC2814-2 by Onsemi

2SC2814-2

Onsemi

Onsemi's 2SC2814-2 is an NPN RF BJT with a max fT of 320 MHz. It has a max IC of 0.03 A and operates up to 125 °C. Ideal for amplifier applications, this transistor comes in a small outline package with gull wing terminals for surface mount assembly.
BFP843H6327XTSA1 by Infineon Technologies

BFP843H6327XTSA1

Infineon Technologies

BFP843H6327XTSA1 by Infineon is a NPN RF BJT transistor with 4 terminals, suitable for C band applications. It has a max power dissipation of 0.125W, hFE of 150, and operates up to 150°C. Ideal for amplifier circuits in high-frequency communication systems due to its small outline package and low collector-emitter voltage of 2.25V.
START499TR by STMicroelectronics

START499TR

STMicroelectronics

START499TR by STMicroelectronics is an NPN RF BJT designed for amplifier applications, featuring a max power dissipation of 0.9 W and operating temp up to 150 °C. It supports ultra-high frequency with a transition frequency of 42 GHz. This compact surface mount transistor ensures efficient performance in small electronic devices.
EC4H08C by Onsemi

EC4H08C

Onsemi

The Onsemi EC4H08C is an NPN RF BJT with a single configuration for surface mount applications. It features a max power dissipation of 0.05W, min DC current gain of 70, and max operating temp of 150 °C. Ideal for high-frequency circuits up to 18GHz in various electronic devices.