Toshiba - 2SC3076-Y(Q)

  1. Home
  2. Toshiba - 2SC3076-Y(Q)
2SC3076-Y(Q) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SC3076-Y(Q)
Description NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 120;
Datasheet 2SC3076-Y(Q) Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 2 A
Maximum Power Dissipation (Abs): 10 W
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Peak Reflow Temperature (C): 260
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT5551 by Samsung

MMBT5551

Samsung

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A; Terminal Finish: Tin/Lead (Sn/Pb);
BU508AW by Inchange Semiconductor

BU508AW

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Collector Current (IC): 8 A; Maximum Operating Temperature: 150 Cel;
BC327-25 by Itt Components

BC327-25

Itt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;
TIP111 by Harris Semiconductor

TIP111

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 4 A; JESD-609 Code: e0;
BC817-40 by Jiangsu Changjiang Electronics Technology

BC817-40

Jiangsu Changjiang Electronics Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1;
BC548C by North American Philips Discrete Products Div

BC548C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N3019 by Semiconductors

2N3019

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): 1 A;
TIP122 by Silicon Group

TIP122

Silicon Group

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Maximum Operating Temperature: 150 Cel;
MJE340 by National Semiconductor

MJE340

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 30;
BSS84 by Weitron Technology

BSS84

Weitron Technology

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
BD243C by Boca Semiconductor

BD243C

Boca Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Minimum DC Current Gain (hFE): 30;
BC547B by Unisonic Technologies

BC547B

Unisonic Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
MJE3055T by Samsung

MJE3055T

Samsung

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP127 by Asi Semiconductor

TIP127

Asi Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Minimum DC Current Gain (hFE): 1000;
TIP32C by North American Philips Discrete Products Div

TIP32C

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;
BC548C by Tt Electronics Plc

BC548C

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
FQP27P06_SW82127 by Fairchild Semiconductor

FQP27P06_SW82127

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
TIP29C by Philips Semiconductors

TIP29C

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
MJE3055T by Iskra Semic Capacitors Industry

MJE3055T

Iskra Semic Capacitors Industry

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
BC337-40 by North American Philips Discrete Products Div

BC337-40

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Maximum Operating Temperature: 150 Cel;