Toshiba - 2SC3558

  1. Home
  2. Toshiba - 2SC3558
2SC3558 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SC3558
Description NPN; Configuration: SINGLE; Maximum Collector Current (IC): .06 A; Transistor Application: SWITCHING; No. of Elements: 1; Qualification: Not Qualified;
Datasheet 2SC3558 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): .06 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 4 V
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
No. of Elements: 1
Polarity or Channel Type: NPN
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MMBT2907ALT1G by Onsemi

MMBT2907ALT1G

Onsemi

MMBT2907ALT1G by Onsemi is a PNP BJT transistor with 100 min hFE, 60V VCEO, and 200MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals and can handle up to 0.6A of collector current.
2N3904 by Microsemi

2N3904

Microsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
SMBTA06E6327HTSA1 by Infineon Technologies

SMBTA06E6327HTSA1

Infineon Technologies

Infineon Technologies' SMBTA06E6327HTSA1 is a NPN BJT transistor with hFE of 100, VCE of 80V, and IC of 0.5A. Ideal for amplifier applications, it operates up to 150°C with a transition frequency of 100MHz. This surface-mount device in a small outline package suits compact designs.
MMBT3906 by Surge Components

MMBT3906

Surge Components

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
2N2219A by Tt Electronics Plc

2N2219A

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM;
BC547AT&A by Continental Device India

BC547AT&A

Continental Device India

BC547AT&A by Continental Device India is a NPN BJT transistor with hFE of 110, IC of 0.1A, and fT of 300MHz. It is used for switching applications due to its max VCE of 45V and Ptot of 0.625W in a cylindrical package.
2N3906 by Lite-on Semiconductor

2N3906

Lite-on Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
2N3904 by Onsemi

2N3904

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT2907AT-7-F by Diodes Incorporated

MMBT2907AT-7-F

Diodes Incorporated

MMBT2907AT-7-F by Diodes Inc. is a PNP small signal BJT transistor with a max collector-emitter voltage of 60V and a max collector current of 0.6A. It is commonly used in applications requiring high-speed switching and amplification, such as audio amplifiers and digital circuits.
BC857BLT1G by Onsemi

BC857BLT1G

Onsemi

BC857BLT1G by Onsemi is a PNP BJT transistor for switching applications. With hFE of 220, VCEO of 45V, and IC of 0.1A, it operates b/w -55 to 150°C. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs.
MMBT3906 by NXP Semiconductors

MMBT3906

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .25 W; Maximum Collector Current (IC): .2 A;
MMBT3906 by Onsemi

MMBT3906

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
2N3906 by Zetex Plc

2N3906

Zetex Plc

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
2N2219A by Crimson Semiconductor

2N2219A

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BCY89 by NXP Semiconductors

BCY89

NXP Semiconductors

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;
2N2222A by Aeroflex/metelics

2N2222A

Aeroflex/metelics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
2N2222A by New England Semiconductor

2N2222A

New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC817-40 by Itt Semiconductor

BC817-40

Itt Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; JEDEC-95 Code: TO-236; Maximum Collector-Base Capacitance: 12 pF;
2N2219A by Swampscott Electronics

2N2219A

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
MMBT3906 by Lite-on Semiconductor

MMBT3906

Lite-on Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Package Style (Meter): SMALL OUTLINE;