2SC3670-D by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SC3670-D
Description	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): 2 A;
Datasheet	2SC3670-D Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	150 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	2 A
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	420
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	1 W
Maximum Collector-Emitter Voltage:	10 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum VCEsat:	.5 V

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