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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 2SC5197 |
| Description | NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Collector Current (IC): 8 A; Maximum Power Dissipation Ambient: 80 W; |
| Datasheet | 2SC5197 Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Nominal Transition Frequency (fT): | 30 MHz |
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Collector Current (IC): | 8 A |
| Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
| Configuration: | SINGLE |
| Transistor Element Material: | SILICON |
| Transistor Application: | AMPLIFIER |
| Polarity or Channel Type: | NPN |
| Surface Mount: | NO |
| Minimum DC Current Gain (hFE): | 35 |
| No. of Terminals: | 3 |
| Qualification: | Not Qualified |
| Maximum Collector-Emitter Voltage: | 120 V |
| Terminal Position: | SINGLE |
| Package Style (Meter): | FLANGE MOUNT |
| JESD-30 Code: | R-PSFM-T3 |
| No. of Elements: | 1 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | THROUGH-HOLE |
| Maximum Operating Temperature: | 150 Cel |
| Case Connection: | COLLECTOR |
| Peak Reflow Temperature (C): | NOT SPECIFIED |
| Maximum VCEsat: | 2 V |
| Maximum Power Dissipation Ambient: | 80 W |
