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Manufacturer | Toshiba |
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Manufacturer's Part Number | 2SC5200N(S1,E,S) |
Description | NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 150 W; Maximum Collector Current (IC): 15 A; |
Datasheet | 2SC5200N(S1,E,S) Datasheet |
NAME | DESCRIPTION |
---|---|
Nominal Transition Frequency (fT): | 30 MHz |
Package Body Material: | PLASTIC/EPOXY |
Maximum Collector Current (IC): | 15 A |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Transistor Application: | AMPLIFIER |
Polarity or Channel Type: | NPN |
Surface Mount: | NO |
Minimum DC Current Gain (hFE): | 35 |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 150 W |
Maximum Collector-Emitter Voltage: | 230 V |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Maximum Operating Temperature: | 150 Cel |
Maximum Collector-Base Capacitance: | 200 pF |
Case Connection: | COLLECTOR |
Maximum VCEsat: | 3 V |