2SC5858 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SC5858
Description	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 22 A;
Datasheet	2SC5858 Datasheet

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	2 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	22 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Polarity or Channel Type:	NPN
Surface Mount:	NO
Minimum DC Current Gain (hFE):	5
No. of Terminals:	3
Qualification:	Not Qualified
Maximum Power Dissipation (Abs):	200 W
Maximum Collector-Emitter Voltage:	750 V
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR

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