Toshiba - 2SC6000(TE16L1-NQ)

  1. Home
  2. Toshiba - 2SC6000(TE16L1-NQ)
2SC6000(TE16L1-NQ) by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SC6000(TE16L1-NQ)
Description Power Bipolar Transistors;
Datasheet 2SC6000(TE16L1-NQ) Datasheet
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

MC1413BDR2G by Onsemi

MC1413BDR2G

Onsemi

MC1413BDR2G by Onsemi is a NPN BJT transistor with 1000 min hFE. It operates up to 150°C, handles 50V max collector-emitter voltage, and supports switching applications. The package is small outline with 16 terminals in gull wing form for surface mount assembly.
BD679A by Motorola

BD679A

Motorola

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 4 A; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 150 Cel;
TIP125 by Central Semiconductor

TIP125

Central Semiconductor

PNP; Configuration: DARLINGTON; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A;
TIP127 by Nte Electronics

TIP127

Nte Electronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Collector Current (IC): 5 A; JEDEC-95 Code: TO-220AB; Peak Reflow Temperature (C): NOT SPECIFIED;
TIP120 by Onsemi

TIP120

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Transistor Element Material: SILICON;
2N3055 by Asi Semiconductor

2N3055

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 115 W; Maximum Collector Current (IC): 15 A;
BDW93C by Onsemi

BDW93C

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 12 A; JESD-30 Code: R-PSFM-T3;
2SC5200N(S1,E,S) by Toshiba

2SC5200N(S1,E,S)

Toshiba

Toshiba's 2SC5200N(S1,E,S) is a NPN power BJT with max VCEsat of 3V, IC of 15A, and Pmax of 150W. Ideal for amplifier applications due to its single configuration and silicon element material.
BD138 by Crimson Semiconductor

BD138

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BD139 by STMicroelectronics

BD139

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP50 by Semitronics

TIP50

Semitronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 5 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 1 A;
NJVMJD44H11T4G-VF01 by Onsemi

NJVMJD44H11T4G-VF01

Onsemi

NJVMJD44H11T4G-VF01 by Onsemi is a NPN BJT transistor with hFE of 40, VCE of 80V, and IC of 8A. Ideal for switching applications, it operates b/w -65 to 150°C. This small outline package with Gull Wing terminals is surface mountable and AEC-Q101 compliant.
TIP111 by Onsemi

TIP111

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Case Connection: COLLECTOR;
MJE340 by Motorola

MJE340

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
2N3055 by New Jersey Semiconductor Products

2N3055

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Collector Current (IC): 15 A; Maximum Collector-Emitter Voltage: 60 V; Transistor Element Material: SILICON;
TIP111 by Micro Commercial Components

TIP111

Micro Commercial Components

Power Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 2 A; Maximum Collector-Emitter Voltage: 80 V; Terminal Form: THROUGH-HOLE;
BCP5616H6327XTSA1 by Infineon Technologies

BCP5616H6327XTSA1

Infineon Technologies

Infineon's BCP5616H6327XTSA1 is a NPN BJT transistor with 80V VCE, 1A IC, and 0.5V VCEsat. Ideal for amplifier applications, it has a hFE of 100, operates up to 150°C, and comes in a small outline package.
TIP31C by Texas Instruments

TIP31C

Texas Instruments

TIP31C by Texas Instruments is a NPN BJT transistor with 3A IC, 30W Pd, and 100V VCE. Ideal for switching applications due to its single configuration and high hFE of 10. Operates up to 150°C, featuring a rectangular package with through-hole terminals.
BD140 by Crimson Semiconductor

BD140

Crimson Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 1.5 A; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;
BD243C by Crimson Semiconductor

BD243C

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 6 A; JESD-30 Code: R-PSFM-T3;