Toshiba - 2SC6026MFVGR,L3F(B

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2SC6026MFVGR,L3F(B by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SC6026MFVGR,L3F(B
Description NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 60 MHz; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .15 A;
Datasheet 2SC6026MFVGR,L3F(B Datasheet
NAME DESCRIPTION
Nominal Transition Frequency (fT): 60 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .15 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: AMPLIFIER
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
No. of Terminals: 3
Maximum Power Dissipation (Abs): .15 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Maximum Operating Temperature: 150 Cel
Maximum Collector-Base Capacitance: 3 pF
Maximum VCEsat: .25 V
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