Toshiba - 2SD1160-O(2-7B2A)

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2SD1160-O(2-7B2A) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SD1160-O(2-7B2A)
Description NPN; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
Datasheet 2SD1160-O(2-7B2A) Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 2 A
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 100
No. of Terminals: 2
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 20 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Case Connection: COLLECTOR
Peak Reflow Temperature (C): NOT SPECIFIED
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