2SD1223 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SD1223
Description	NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 4 A; No. of Elements: 1;
Datasheet	2SD1223 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	4 A
Configuration:	DARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	Other Transistors
Surface Mount:	YES
Terminal Finish:	Tin/Lead (Sn/Pb)
No. of Terminals:	2
Maximum Power Dissipation (Abs):	15 W
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Case Connection:	COLLECTOR
Maximum Power Dissipation Ambient:	1 W
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	1000
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	80 V
Maximum VCEsat:	1.5 V

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