Toshiba - 2SD2012,F(J

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2SD2012,F(J by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SD2012,F(J
Description Power Bipolar Transistors;
Datasheet 2SD2012,F(J Datasheet
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BCP56-16-TP by Micro Commercial Components

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TIP112 by Rectron

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BDW93C by Bourns

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TIP47 by Onsemi

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TIP41C by Baneasa S A

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2N3055 by Solid State Devices

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MJE15035G by Onsemi

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JANTXV2N3055 by Cobham Plc

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TIP110 by Onsemi

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NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 500;
TIP122G by Onsemi

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TIP122G by Onsemi is a NPN power BJT with 100V VCEO, 5A IC, and 65W Ptot. Ideal for amplifier applications, it features a Darlington configuration with built-in diode and resistor in a plastic/epoxy package. With an hFE of 1000 and fT of 4MHz, this transistor operates up to 150°C.
BD14016S by Onsemi

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TIP47 by Power Innovations

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NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Terminal Form: THROUGH-HOLE;
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