Toshiba - 2SD2208

  1. Home
  2. Toshiba - 2SD2208
2SD2208 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SD2208
Description NPN; Maximum Collector Current (IC): 2 A; Qualification: Not Qualified; Maximum Collector-Emitter Voltage: 80 V; Transistor Element Material: SILICON;
Datasheet 2SD2208 Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 2 A
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 80 V
Transistor Element Material: SILICON
Polarity or Channel Type: NPN
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BC817-40 by National Semiconductor

BC817-40

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .33 W; Maximum Collector Current (IC): .5 A;
2N3904 by Swampscott Electronics

2N3904

Swampscott Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3904-7-F by Diodes Incorporated

MMBT3904-7-F

Diodes Incorporated

Diodes Inc. MMBT3904-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.3V, hFE of 30, and IC of 0.2A. With a max operating temp of 150°C, it's ideal for small outline SMT designs in automotive electronics.
BC847CW,115 by NXP Semiconductors

BC847CW,115

NXP Semiconductors

NXP Semiconductors' BC847CW,115 is a NPN BJT transistor for switching applications. With VCEsat of 0.6V and hFE of 420, it operates at max temp of 150°C. Its small outline package with Gull Wing terminals makes it suitable for surface mount designs.
BC847BM,315 by Nexperia

BC847BM,315

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Maximum Operating Temperature: 150 Cel;
2N3904 by National Semiconductor

2N3904

National Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
MMBT3906 by Comchip Technology

MMBT3906

Comchip Technology

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Terminal Position: DUAL;
BC847C by Forward International Electronics

BC847C

Forward International Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .1 A;
JANTX2N2222AUA by Cobham Plc

JANTX2N2222AUA

Cobham Plc

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Minimum DC Current Gain (hFE): 30;
BC847BV,115 by NXP Semiconductors

BC847BV,115

NXP Semiconductors

BC847BV,115 by NXP Semiconductors is a NPN BJT with 2 elements for switching applications. Features include hFE of 200, VCE of 45V, and IC of 0.1A. It comes in a small outline package suitable for surface mount technology.
2N2222AUB by Vpt Components

2N2222AUB

Vpt Components

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Collector Current (IC): .8 A; Maximum Collector-Emitter Voltage: 50 V;
MMBT3906 by Good-ark Electronics

MMBT3906

Good-ark Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Turn On Time (ton): 300 ns;
BC817-25QAZ by Nexperia

BC817-25QAZ

Nexperia

Small Signal Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; Reference Standard: AEC-Q101; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; JESD-609 Code: e3;
SBC817-40LT1G by Good-ark Electronics

SBC817-40LT1G

Good-ark Electronics

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .5 A;
MMBT3904 by General Semiconductor

MMBT3904

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Qualification: Not Qualified;
BC547CBU by Onsemi

BC547CBU

Onsemi

BC547CBU by Onsemi is a NPN BJT transistor with hFE of 420, VCE of 45V, and IC of 0.1A. Ideal for switching applications, it has a max power dissipation of 0.625W and operates up to 150°C. Its through-hole package makes it suitable for various electronic circuits.
SMBTA42E6327HTSA1 by Infineon Technologies

SMBTA42E6327HTSA1

Infineon Technologies

SMBTA42E6327HTSA1 by Infineon is a NPN BJT with max. VCE of 300V, IC of 0.5A, and hFE of 40. Ideal for small signal applications in electronics due to its high transition frequency of 50MHz and temp range up to 150°C. Its Gull Wing terminals make it suitable for surface mount designs.
2N2219A by New Jersey Semiconductor Products

2N2219A

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb);
MMBTA42-7-F by Diodes Incorporated

MMBTA42-7-F

Diodes Incorporated

Diodes Inc. MMBTA42-7-F is a NPN BJT transistor for switching applications. Features include VCEsat of 0.5V, hFE of 40, and VCEO of 300V. Ideal for small outline packages with Gull Wing terminals in surface mount configurations.
2N2907A by Itt Semiconductor

2N2907A

Itt Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .4 W; Maximum Collector Current (IC): .6 A;