Toshiba - 2SD684A

  1. Home
  2. Toshiba - 2SD684A
2SD684A by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SD684A
Description NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 6 A; JESD-609 Code: e0;
Datasheet 2SD684A Datasheet
NAME DESCRIPTION
Maximum Collector Current (IC): 6 A
Maximum Power Dissipation (Abs): 30 W
Configuration: DARLINGTON
Maximum Operating Temperature: 150 Cel
Sub-Category: Other Transistors
Polarity or Channel Type: NPN
Surface Mount: NO
Minimum DC Current Gain (hFE): 600
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

2N2219A by Semiconductors

2N2219A

Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BD243C by Inchange Semiconductor

BD243C

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 8 A; Minimum DC Current Gain (hFE): 30;
TIP122 by Harris Semiconductor

TIP122

Harris Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 5 A; Terminal Finish: Tin/Lead (Sn/Pb);
2N2219A by Philips Semiconductors

2N2219A

Philips Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
TIP42C by National Semiconductor

TIP42C

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BC856B by North American Philips Discrete Products Div

BC856B

North American Philips Discrete Products Div

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
TIP111 by Boca Semiconductor

TIP111

Boca Semiconductor

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Maximum Operating Temperature: 150 Cel;
MMBT3906 by Sinyork

MMBT3906

Sinyork

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .2 A;
TIP110 by North American Philips Discrete Products Div

TIP110

North American Philips Discrete Products Div

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Finish: Tin/Lead (Sn/Pb);
2N7000-G by Weitron Technology

2N7000-G

Weitron Technology

Other Transistors;
FDN306P-F095 by Fairchild Semiconductor

FDN306P-F095

Fairchild Semiconductor

FDN306P-F095 by Fairchild Semiconductor is a P-CHANNEL MOSFET with 2.6A max drain current and 0.5W max power dissipation. Ideal for surface mount applications, it operates in enhancement mode at up to 150°C, making it suitable for various electronic devices requiring efficient power management.
TIP31C by North American Philips Discrete Products Div

TIP31C

North American Philips Discrete Products Div

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 3 A;
TIP29C by Inchange Semiconductor

TIP29C

Inchange Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 30 W; Maximum Collector Current (IC): 1 A;
IRF640 by General Electric Solid State

IRF640

General Electric Solid State

Other Transistors;
TIP41C by Tt Electronics Plc

TIP41C

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 65 W; Maximum Collector Current (IC): 6 A;
BD139 by Infineon Technologies

BD139

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
BC337-16 by Bharat Electronics

BC337-16

Bharat Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .8 A; Minimum DC Current Gain (hFE): 100;
MJE3055T by Semiconductor Technology

MJE3055T

Semiconductor Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
BD138 by National Semiconductor

BD138

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 75 MHz; Maximum Power Dissipation (Abs): 8 W; Maximum Collector Current (IC): 1.5 A;
TIP32C by Unisonic Technologies

TIP32C

Unisonic Technologies

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 3 A;