Toshiba - 2SJ106BLTE85R

  1. Home
  2. Toshiba - 2SJ106BLTE85R
2SJ106BLTE85R by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SJ106BLTE85R
Description P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Operating Mode: DEPLETION MODE; Terminal Position: DUAL;
Datasheet 2SJ106BLTE85R Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: SWITCHING
JEDEC-95 Code: TO-236
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 125 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

BS170FTA by Zetex Plc

BS170FTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL; Minimum DS Breakdown Voltage: 60 V;
BSS169H6327XTSA1 by Infineon Technologies

BSS169H6327XTSA1

Infineon Technologies

BSS169H6327XTSA1 by Infineon is a N-CHANNEL FET with 100V DS Breakdown Voltage and 0.17A Drain Current. Ideal for small signal applications, it features a built-in diode, operates in depletion mode, and has a max power dissipation of 0.36W.
BSS123-G by Onsemi

BSS123-G

Onsemi

Small Signal Field-Effect Transistors; Terminal Finish: Matte Tin (Sn) - annealed; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BSS138P,215 by Nexperia

BSS138P,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Transistor Application: SWITCHING; Operating Mode: ENHANCEMENT MODE;
FDN327N by Fairchild Semiconductor

FDN327N

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .46 W; No. of Terminals: 3; Maximum Drain-Source On Resistance: .07 ohm;
BS170P by Diodes Incorporated

BS170P

Diodes Incorporated

The Diodes Inc. BS170P is a N-CHANNEL FET with 60V DS breakdown voltage and 0.27A ID. Ideal for switching applications, it features a single configuration, 5 ohm RDS(on), and operates in enhancement mode. The package style is IN-LINE with PLASTIC/EPOXY body material and SILICON element material.
2N7002DW by Panjit International

2N7002DW

Panjit International

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Minimum DS Breakdown Voltage: 60 V; Maximum Drain Current (ID): .115 A;
NDS7002A_NL by Fairchild Semiconductor

NDS7002A_NL

Fairchild Semiconductor

Fairchild Semiconductor's NDS7002A_NL is a N-CHANNEL FET with 60V DS breakdown voltage, 0.28A ID, and 2 ohm RDS. Ideal for switching applications in enhancement mode, it operates b/w -65 to 150 °C with a max power dissipation of 0.3W.
BC548B by Weitron Technology

BC548B

Weitron Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
2N7002K by Diodes Incorporated

2N7002K

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .3 A; Maximum Feedback Capacitance (Crss): 5 pF; Terminal Form: GULL WING;
MMBFJ201 by National Semiconductor

MMBFJ201

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; No. of Elements: 1; Package Shape: RECTANGULAR;
2N7000 by Micro Commercial Components

2N7000

Micro Commercial Components

Small Signal Field-Effect Transistors; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Transistor Element Material: SILICON; Minimum DS Breakdown Voltage: 60 V;
2N7002 by Panjit International

2N7002

Panjit International

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
FDS4675-F085 by Onsemi

FDS4675-F085

Onsemi

FDS4675-F085 by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features 11A Drain Current, 0.013 ohm On Resistance, and operates in ENHANCEMENT MODE. With GULL WING terminals and SMALL OUTLINE package style, it offers high performance in a compact design.
FDC6561AN by Onsemi

FDC6561AN

Onsemi

FDC6561AN by Onsemi is a N-CHANNEL FET with 2 elements, built-in diode, and max drain current of 2.5A. Ideal for switching applications, it operates in enhancement mode with a min DS breakdown voltage of 30V. With a package style of small outline and Gull Wing terminals, it can handle up to 0.96W power dissipation.
FDY300NZ by Onsemi

FDY300NZ

Onsemi

FDY300NZ by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 0.6A Drain Current, and 0.7 ohm On Resistance. Ideal for SWITCHING applications, it features ENHANCEMENT MODE operation in a SMALL OUTLINE package suitable for surface mount technology.
BSS138L by Fairchild Semiconductor

BSS138L

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 3; Maximum Feedback Capacitance (Crss): 5 pF; Maximum Drain Current (ID): .2 A;
BC548B by Shanghai Lunsure Electronic Technology

BC548B

Shanghai Lunsure Electronic Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Terminal Finish: Tin/Lead (Sn/Pb); No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
BSS138LT7G by Onsemi

BSS138LT7G

Onsemi

BSS138LT7G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features single configuration with built-in diode, 3.5 ohm max RDS(on), and 150°C max operating temp. This small outline transistor in gull wing package is designed for enhancement mode operation in surface mount setups.
MMBF170LT1G by Onsemi

MMBF170LT1G

Onsemi

MMBF170LT1G by Onsemi is a N-CHANNEL FET with 60V DS Breakdown Voltage and 0.5A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 0.225W. This small outline transistor has a temperature range from -55 to 150 °C.