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| Manufacturer | Toshiba |
|---|---|
| Manufacturer's Part Number | 2SJ567(TE16L1,Q) |
| Description | P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1; |
| Datasheet | 2SJ567(TE16L1,Q) Datasheet |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | 20 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 2.5 A |
| Maximum Drain Current (Abs) (ID): | 2.5 A |
| Sub-Category: | Other Transistors |
| Polarity or Channel Type: | P-CHANNEL |
| Surface Mount: | NO |









