2SJ676 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SJ676
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1.3 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Position: SINGLE;
Datasheet	2SJ676 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Drain Current (ID):	2.5 A
Maximum Pulsed Drain Current (IDM):	10 A
Sub-Category:	Other Transistors
Surface Mount:	NO
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1.3 W
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	2 ohm
Avalanche Energy Rating (EAS):	191 mJ
Polarity or Channel Type:	P-CHANNEL
Minimum DS Breakdown Voltage:	200 V
Qualification:	Not Qualified
Maximum Drain Current (Abs) (ID):	2.5 A

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