Toshiba - 2SK2145-BL

  1. Home
  2. Toshiba - 2SK2145-BL
2SK2145-BL by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SK2145-BL
Description N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Qualification: Not Qualified; Terminal Form: GULL WING;
Datasheet 2SK2145-BL Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: COMMON SOURCE, 2 ELEMENTS
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Transistor Application: AMPLIFIER
Sub-Category: FET General Purpose Small Signal
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: TIN LEAD
JESD-609 Code: e0
No. of Terminals: 5
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .3 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: DEPLETION MODE
Additional Features: LOW NOISE
Maximum Operating Temperature: 125 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

IRLHS6376TRPBF by International Rectifier

IRLHS6376TRPBF

International Rectifier

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.6 W; Maximum Drain Current (ID): 3.6 A; Package Style (Meter): SMALL OUTLINE;
2N7002KW by Onsemi

2N7002KW

Onsemi

2N7002KW by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.31A max drain current. Ideal for switching applications, it features a built-in diode, operates in enhancement mode, and has a max power dissipation of 0.3W.
ZXM61P03FTA by Zetex Plc

ZXM61P03FTA

Zetex Plc

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .806 W; No. of Terminals: 3; JESD-609 Code: e3;
SI2323DS-T1-GE3 by Vishay Intertechnology

SI2323DS-T1-GE3

Vishay Intertechnology

SI2323DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.039 ohm On Resistance. Suitable for surface mount, it has a max temperature of 150°C and features METAL-OXIDE SEMICONDUCTOR technology.
2N7002T by Vishay Siliconix

2N7002T

Vishay Siliconix

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e0; Package Shape: RECTANGULAR; Maximum Feedback Capacitance (Crss): 5 pF;
FDC6305N by Fairchild Semiconductor

FDC6305N

Fairchild Semiconductor

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .96 W; Minimum DS Breakdown Voltage: 20 V; Transistor Application: SWITCHING;
2N7002 by General Semiconductor

2N7002

General Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JEDEC-95 Code: TO-236AB; Qualification: Not Qualified; Package Style (Meter): SMALL OUTLINE;
BSS138-G by Onsemi

BSS138-G

Onsemi

BSS138-G by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and operates in enhancement mode. With a max drain current of 0.22A and on-resistance of 6 ohm, it can handle up to 0.36W power dissipation efficiently.
SI2371EDS-T1-GE3 by Vishay Intertechnology

SI2371EDS-T1-GE3

Vishay Intertechnology

SI2371EDS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.8A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C, featuring 0.045 ohm RDS(on) and 1.7W Power Dissipation in a SMALL OUTLINE package.
FDN335N by Onsemi

FDN335N

Onsemi

FDN335N by Onsemi is a N-CHANNEL FET with 20V DS Breakdown Voltage, 1.7A Drain Current, and 0.07 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 150°C. This SMALL OUTLINE transistor has GULL WING terminals and matte tin finish for surface mount assembly.
FDN304P_NL by Fairchild Semiconductor

FDN304P_NL

Fairchild Semiconductor

Fairchild Semiconductor's FDN304P_NL is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 2.4A and Drain-Source On Resistance of 0.052 ohm. The transistor operates in ENHANCEMENT MODE, with a max power dissipation of 0.5W at 150°C.
2N7000G by Rochester Electronics

2N7000G

Rochester Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Maximum Drain-Source On Resistance: 5 ohm; JESD-30 Code: O-PBCY-W3;
2N7002 by Jiangsu Changjiang Electronics Technology

2N7002

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING;
BSS84PH6433XTMA1 by Infineon Technologies

BSS84PH6433XTMA1

Infineon Technologies

BSS84PH6433XTMA1 by Infineon is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 0.17A Drain Current, 8 ohm On Resistance, and operates at up to 150°C. This SMALL OUTLINE transistor has METAL-OXIDE SEMICONDUCTOR tech and meets AEC-Q101 standards for automotive use.
2N7000 by Teledyne Components

2N7000

Teledyne Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-226AA; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 60 V;
2N7002W by Fairchild Semiconductor

2N7002W

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Feedback Capacitance (Crss): 7 pF; Terminal Finish: MATTE TIN;
2N7002T by Jiangsu Changjiang Electronics Technology

2N7002T

Jiangsu Changjiang Electronics Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Package Shape: RECTANGULAR;
FDG6332C-F085 by Onsemi

FDG6332C-F085

Onsemi

FDG6332C-F085 by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm on-resistance. Suitable for surface mount with Gull Wing terminals in a small outline package.
2N7002DWS-7 by Diodes Incorporated

2N7002DWS-7

Diodes Incorporated

Diodes Inc. 2N7002DWS-7 is a N-channel FET with 60V DS breakdown voltage, 0.247A max drain current, and 4 ohm max on resistance. Ideal for switching applications in small outline packages, it operates from -55 to 150°C with MIL-STD-202 compliance.
2N7000 by Weitron Technology

2N7000

Weitron Technology

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; Terminal Form: THROUGH-HOLE; Maximum Drain Current (ID): .2 A;