2SK241TPE4 by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SK241TPE4
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Package Shape: RECTANGULAR;
Datasheet	2SK241TPE4 Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	AMPLIFIER
Maximum Feedback Capacitance (Crss):	.05 pF
Maximum Drain Current (ID):	.03 A
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	NO
No. of Terminals:	3
Minimum DS Breakdown Voltage:	20 V
Qualification:	Not Qualified
Terminal Position:	SINGLE
Package Style (Meter):	IN-LINE
JESD-30 Code:	R-PSIP-T3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	THROUGH-HOLE
Operating Mode:	DEPLETION MODE
Additional Features:	CASCODE MOS
Highest Frequency Band:	VERY HIGH FREQUENCY BAND
Maximum Operating Temperature:	125 Cel
Peak Reflow Temperature (C):	240

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