2SK3320-GR(TE85L,F by Toshiba | Transistors

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Manufacturer	Toshiba
Manufacturer's Part Number	2SK3320-GR(TE85L,F
Description	N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Package Style (Meter): SMALL OUTLINE; Maximum Power Dissipation Ambient: .2 W;
Datasheet	2SK3320-GR(TE85L,F Datasheet

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON SOURCE, 2 ELEMENTS
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	JUNCTION
Transistor Application:	AMPLIFIER
Maximum Feedback Capacitance (Crss):	3 pF
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	5
Minimum DS Breakdown Voltage:	50 V
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G5
No. of Elements:	2
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	DEPLETION MODE
Additional Features:	LOW NOISE
Maximum Operating Temperature:	125 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED
Maximum Power Dissipation Ambient:	.2 W

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