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Manufacturer | Toshiba |
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Manufacturer's Part Number | 2SK3320 |
Description | N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 125 Cel; |
Datasheet | 2SK3320 Datasheet |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | COMMON SOURCE, 2 ELEMENTS |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | JUNCTION |
Transistor Application: | AMPLIFIER |
Sub-Category: | FET General Purpose Small Signal |
Surface Mount: | YES |
No. of Terminals: | 5 |
Maximum Power Dissipation (Abs): | .2 W |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G5 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DEPLETION MODE |
Maximum Operating Temperature: | 125 Cel |
Maximum Power Dissipation Ambient: | .2 W |
Maximum Feedback Capacitance (Crss): | 3 pF |
Polarity or Channel Type: | N-CHANNEL |
Minimum DS Breakdown Voltage: | 50 V |
Qualification: | Not Qualified |
Additional Features: | LOW NOISE |
Peak Reflow Temperature (C): | NOT SPECIFIED |