Toshiba - 2SK3376MFV

  1. Home
  2. Toshiba - 2SK3376MFV
2SK3376MFV by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SK3376MFV
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
Datasheet 2SK3376MFV Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR
Transistor Element Material: SILICON
Field Effect Transistor Technology: JUNCTION
Maximum Drain Current (ID): .00024 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 3
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: DEPLETION MODE
Maximum Operating Temperature: 125 Cel
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

FDS4685 by Onsemi

FDS4685

Onsemi

FDS4685 by Onsemi is a P-CHANNEL FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max Drain Current of 8.2A and an Operating Temperature up to 150°C. With a small outline package style and surface mount capability, it offers high performance in compact designs.
BSS138W by Good-ark Electronics

BSS138W

Good-ark Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
BSS123 by Diodes Incorporated

BSS123

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .36 W; Maximum Feedback Capacitance (Crss): 4 pF; No. of Terminals: 3;
FDC5614P by Fairchild Semiconductor

FDC5614P

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 3 A;
BSS84PL6327 by Infineon Technologies

BSS84PL6327

Infineon Technologies

BSS84PL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 8 ohm RDS(on). Ideal for small outline applications, it operates in enhancement mode with max ID of 0.17A. With GULL WING terminals and built-in diode, it's suitable for various electronic devices.
FDC5612_NL by Fairchild Semiconductor

FDC5612_NL

Fairchild Semiconductor

FDC5612_NL by Fairchild Semiconductor is a N-CHANNEL FET with 60V DS breakdown voltage and 4.3A max drain current, ideal for switching applications. It features a built-in diode, operates in enhancement mode, and has a max power dissipation of 1.6W. This small outline transistor with GULL WING terminals is designed for surface mount applications at temperatures up to 150°C.
FDV304P_NL by Fairchild Semiconductor

FDV304P_NL

Fairchild Semiconductor

FDV304P_NL by Fairchild Semiconductor is a P-CHANNEL FET with 25V DS Breakdown Voltage, 0.46A Drain Current, and 1.1 ohm On Resistance. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temperature of 150°C. This SMALL OUTLINE transistor features GULL WING terminals and SILICON element material.
BSH103,215 by Nexperia

BSH103,215

Nexperia

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .5 ohm; Peak Reflow Temperature (C): 260; No. of Terminals: 3;
FDS4435BZ by Fairchild Semiconductor

FDS4435BZ

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 8;
BSL215CH6327XTSA1 by Infineon Technologies

BSL215CH6327XTSA1

Infineon Technologies

BSL215CH6327XTSA1 by Infineon: N/P-Channel FET with 20V DS Breakdown Voltage, 0.5W Power Dissipation, and 0.14 ohm RDS(ON). Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance.
SI2323DS-T1-GE3 by Vishay Intertechnology

SI2323DS-T1-GE3

Vishay Intertechnology

SI2323DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3.7A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.039 ohm On Resistance. Suitable for surface mount, it has a max temperature of 150°C and features METAL-OXIDE SEMICONDUCTOR technology.
NDS355AN by Fairchild Semiconductor

NDS355AN

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL;
IRF9310TRPBF by International Rectifier

IRF9310TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Pulsed Drain Current (IDM): 160 A; Qualification: Not Qualified;
BSS84 by Good-ark Electronics

BSS84

Good-ark Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .13 A; Package Shape: RECTANGULAR;
FDS9945 by Onsemi

FDS9945

Onsemi

FDS9945 by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 3.5A max drain current, ideal for switching applications. It features a separate configuration with built-in diode, GULL WING terminals, and operates in enhancement mode. The small outline package style and max operating temperature of 175°C make it suitable for various electronic designs.
MMBFJ113 by National Semiconductor

MMBFJ113

National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Qualification: Not Qualified; No. of Terminals: 3;
BSD235CH6327XTSA1 by Infineon Technologies

BSD235CH6327XTSA1

Infineon Technologies

Infineon's BSD235CH6327XTSA1 is a Small Signal FET with N/P-Channel, 2 elements w/ diode. Operating in enhancement mode, it has max ID of 0.95A and RDS(on) of 0.35Ω. Ideal for automotive applications meeting AEC-Q101 standard.
BSS138BK by Micro Commercial Components

BSS138BK

Micro Commercial Components

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .36 A; Package Body Material: PLASTIC/EPOXY; Peak Reflow Temperature (C): 260;
BSS138KT-TP by Micro Commercial Components

BSS138KT-TP

Micro Commercial Components

Small Signal Field-Effect Transistors; Minimum DS Breakdown Voltage: 50 V; Maximum Drain-Source On Resistance: 2.5 ohm; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (ID): .25 A;
BSS138LT1G by Onsemi

BSS138LT1G

Onsemi

BSS138LT1G by Onsemi is a N-CHANNEL FET with 50V DS Breakdown Voltage, 0.2A Drain Current, and 3.5 ohm On Resistance. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Operates b/w -55 to 150 °C with small outline package style for surface mount assembly.