Toshiba - 2SK3497

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2SK3497 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK3497
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Pulsed Drain Current (IDM): 30 A; Package Body Material: PLASTIC/EPOXY;
Datasheet 2SK3497 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: AMPLIFIER
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 30 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 180 V
Qualification: Not Qualified
Maximum Power Dissipation (Abs): 130 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (Abs) (ID): 10 A
Case Connection: DRAIN
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