Toshiba - 2SK3625(2-10S1B)

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2SK3625(2-10S1B) by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK3625(2-10S1B)
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Pulsed Drain Current (IDM): 100 A; Maximum Drain Current (ID): 25 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet 2SK3625(2-10S1B) Datasheet
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 488 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 25 A
Maximum Pulsed Drain Current (IDM): 100 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): IN-LINE
JESD-30 Code: R-PSIP-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .082 ohm
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