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Manufacturer | Toshiba |
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Manufacturer's Part Number | 2SK4103 |
Description | N-CHANNEL; Transistor Element Material: SILICON; Qualification: Not Qualified; Maximum Drain-Source On Resistance: 1.5 ohm; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 3; |
Datasheet | 2SK4103 Datasheet |
NAME | DESCRIPTION |
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No. of Terminals: | 3 |
Minimum DS Breakdown Voltage: | 500 V |
Qualification: | Not Qualified |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
No. of Elements: | 1 |
Operating Mode: | ENHANCEMENT MODE |
Maximum Drain Current (ID): | 5 A |
Polarity or Channel Type: | N-CHANNEL |
Maximum Drain-Source On Resistance: | 1.5 ohm |