Toshiba - 2SK4103

2SK4103 by Toshiba

Image shown is a representation only.

Manufacturer Toshiba
Manufacturer's Part Number 2SK4103
Description N-CHANNEL; Transistor Element Material: SILICON; Qualification: Not Qualified; Maximum Drain-Source On Resistance: 1.5 ohm; Operating Mode: ENHANCEMENT MODE; No. of Terminals: 3;
Datasheet 2SK4103 Datasheet
NAME DESCRIPTION
No. of Terminals: 3
Minimum DS Breakdown Voltage: 500 V
Qualification: Not Qualified
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Drain Current (ID): 5 A
Polarity or Channel Type: N-CHANNEL
Maximum Drain-Source On Resistance: 1.5 ohm
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products