Toshiba - 2SK4112

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2SK4112 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 2SK4112
Description N-CHANNEL; Surface Mount: NO; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 600 V; Terminal Position: SINGLE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet 2SK4112 Datasheet
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): 10 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: NO
No. of Terminals: 3
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Drain-Source On Resistance: 1 ohm
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