Toshiba - 3SK121

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3SK121 by Toshiba

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Manufacturer Toshiba
Manufacturer's Part Number 3SK121
Description N-CHANNEL; Field Effect Transistor Technology: METAL SEMICONDUCTOR; Maximum Power Dissipation Ambient: .2 W; Maximum Drain Current (ID): .05 A; Maximum Drain Current (Abs) (ID): .05 A; Terminal Finish: Tin/Lead (Sn/Pb);
Datasheet 3SK121 Datasheet
NAME DESCRIPTION
Field Effect Transistor Technology: METAL SEMICONDUCTOR
Maximum Drain Current (ID): .05 A
Maximum Drain Current (Abs) (ID): .05 A
Sub-Category: Other Transistors
Polarity or Channel Type: N-CHANNEL
Maximum Power Dissipation Ambient: .2 W
Terminal Finish: Tin/Lead (Sn/Pb)
JESD-609 Code: e0
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